Abstract:Perovskite solar cells (PSCs) have achieved boosted efficiency growth in the last decade by utilizing 2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenylamine)-9,9′-spirobifluorene (spiro-OMeTAD). Various dopant-free small molecules and polymers were introduced as hole-transporting materials (HTMs) to revamp the drawbacks of spiro-OMeTAD such as poor stability, high cost, and sophisticated processing. Herein, a polymer showing enhanced π-conjugation, trithiophene-benzene (TTB), was put forward through molecular engineering by further modifying the previously reported HTM [2,4-dithiobiuret (DTB)]. One more thiophene was embedded into the main chain to increase the exposure of sulfur atoms to perovskite, as well as to enhance the conjugation effect. The continuously maintained π–π stacking guarantees smooth hole extraction from the perovskite layer. TTB-based PSCs not only show a high power conversion efficiency (PCE) of 18.2% in high-level devices with dopant-free organic HTMs but also demonstrate outstanding ambient stability, retaining 91.1% of their initial PCE after 30 days of storage.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsaem.0c03263?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsaem.0c03263</a>.Detailed synthesis procedures and diagrams of TTB; NMR characterization of 1,4-dibromo-2,5-bis((2- butyloctyl)oxy)benzene; GPC of TTB; TGA and DSC results, cyclic voltammetry characterization, UPS, and fitting results of in-plane GIWAXS profiles of TTB and DTB; DFT calculations of dihedral angles between thiophene and benzene, and benzene and benzene in internal TTB; top-view SEM images of perovskite, TTB on perovskite, and DTB on perovskite; J–V curves of perovskite solar cells fabricated with different concentrations of TTB; forward and reverse scanning curves of cells based on TTB, DTB, and spiro-OMeTAD; J–V curves of cells based on TTB, DTB, doped spiro-OMeTAD, and undoped spiro-OMeTAD; J–V curves of cells based on two-step and antisolvent methods; DFT calculation of EPS of TTB and DTB; distribution of PCE of different batches of TTB- and DTB-based devices; contact angles of TTB and DTB; HOMO levels, LUMO levels, and band gap values of TTB and DTB; hole mobilities of TTB and DTB; values of q vectors, d-spacing, full width at half-maxima, and calculated crystallization coherence lengths of TTB and DTB; fitting values of time-resolved photoluminescence of TTB and DTB; and photovoltaic parameters of different devices (<a class="ext-link" href="/doi/suppl/10.1021/acsaem.0c03263/suppl_file/ae0c03263_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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