TiO2 functionalized AlGaN/GaN HEMT gas sensor based on capacitance change strategy under room temperature

Litao Liu,Heqiu Zhang,Ruiliang Xu,Wenhui Zhang,Xiaochuan Xia,Ruinian Hua,Kexiong Zhang,Huishi Huang,Nanfa Xu,Hongwei Liang
DOI: https://doi.org/10.1016/j.materresbull.2023.112186
IF: 5.6
2023-06-01
Materials Research Bulletin
Abstract:A fast response and high-selectivity TiO2@Polymine (PEI) modified AlGaN/GaN high electron mobility transistor (HEMT) gas sensor is proposed and fabricated. It can be used to detect formaldehyde (HCHO) under room temperature (RT, about 25 °C). The working mechanism of this sensor is to affect the channel current by changing the cap capacitance of HEMT. The capacitance of amino-functionalized TiO2 as photocatalyst changes with the adsorb and degrade process under UV irradiation (365 nm, 2 mW). Compared with volatile organic compounds (VOCs), it has exhibited excellent gas-sensing performance for HCHO vapour. The detection limit of HCHO is 5 ppm and the signal sensitivity is 312 nA/ppm at RT. Due to the low operating voltage and small sensor size, it is expected to be simple and portable.
materials science, multidisciplinary
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