RF Distortion Characterisation of Sub-Micron CMOS

L. Tiemeijer,R. V. Langevelde,O. Gaillard,R. Havens,P. Baltus,P. Woerlee,D. Klaassen
DOI: https://doi.org/10.1109/ESSDERC.2000.194815
2000-09-11
Abstract:Distortion measurements up to 1 GHz ground tone for 3 different sub-micron CMOS technologies with minimum gatelengths down to 0.18 comply well with an accurate compact model. Using a new linearity figure of merit measurements are presented, which show that up to 1 GHz a high linearity at practical bias conditions is obtained because the distortion still predominantly originates from the nonlinear IV characteristics.
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