Broadband W-band power amplifier using 40 nm bulk CMOS

T. Tran,S. Vehring,Yaoshun Ding,A. Hamidian,G. Boeck
DOI: https://doi.org/10.1109/GEMIC.2016.7461578
2016-03-14
Abstract:In this paper the design and measurement of a four stage broadband differential power amplifier intended for W-band using 40 nm bulk CMOS is presented. In order to achieve broadband performance a complex output matching network consisting of transmission line elements and transformers is employed. Furthermore capacitive cross-coupling neutralization is introduced to enhance the stability and the small-signal gain of the power amplifier, which is proofed by a small-signal calculation. The transistor dimension and matching network are optimized for the best compromise between bandwidth, output power and power-added-efficiency. Measurements show broadband characteristic from 75 GHz until 110 GHz with more than 10 dBm of output power and 10% of power-added-efficiency at 1.1 V supply voltage.
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