Novel SONOS-Type Nonvolatile Memory Device With Optimal Al Doping in HfAlO Charge-Trapping Layer

P. Tsai,K. Chang-Liao,Chu-Yung Liu,Tien-Ko Wang,P. Tzeng,C. Lin,L. Lee,M. Tsai
DOI: https://doi.org/10.1109/LED.2007.915380
IF: 4.8157
2008-02-22
IEEE Electron Device Letters
Abstract:Operation properties of polysilicon-oxide-nitride-oxide-silicon-type Flash device with HfAlO charge-trapping layer having various Al contents were investigated in this letter. Satisfactory performance in terms of operation speed, retention, and program/erase endurance of the Flash device is achieved with the optimal Al content of 18%-28% in the HfAlO trapping layer. In addition, high-speed operation can be attained with the combination of channel-hot-electron-injection programming and band-to-band hot hole erasing for NOR architecture applications.
What problem does this paper attempt to address?