CARBON IMPLANTATION BY POLYATOMIC ION SOURCE OF ORGANIC LIQUIDS

M. Takeuchi,G. Takaoka,H. Ryuto
Abstract:A polyatomic ion source using n-octane (C8H18) for a shallow implantation of polyatomic carbons was developed. C3H + 7 or C6H + 13 ions produced by electronbombardment of n-octane vapor were irradiated onto Si(100) at carbon-equivalent energy of 1 keV for carbon dose of 1×1015, 5×1015 and 1×1016 cm−2. Depth profile of the carbon was analyzed by X-ray photoelectron spectroscopy. As a result, the C6H + 13 was implanted deeper than the C3H + 7 at the same incident energy per atom. This is probably due to vertical impact effect corresponding to long-chain form of alkyl ions.
What problem does this paper attempt to address?