IVA-5 through-AIN implantation for a high transconductance self-aligned GaAs MESFET

H. Nishi,H. Onodera,H. Kawata,N. Yokoyama,A. Shibatomi
DOI: https://doi.org/10.1109/T-ED.1983.21377
IF: 3.1
1983-11-01
IEEE Transactions on Electron Devices
Abstract:
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