Fabrication and characterization of embedded air-prism light emitting diodes

C. Hong
DOI: https://doi.org/10.1364/ACP.2009.TUN3
2009-11-02
Abstract:We report characteristics of the InGaN/GaN light emitting diodes (LEDs) with embedded air prisms (EAP) via a wet etching process. EAP LED output power was increased 2.1 times compared with the conventional LED due to the improvement in the scattering of photons at the EAP interface.
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