Bridging the Reality Gap in Quantum Devices with Physics-Aware Machine Learning
D. L. Craig,H. Moon,F. Fedele,D. T. Lennon,B. van Straaten,F. Vigneau,L. C. Camenzind,D. M. Zumbühl,G. A. D. Briggs,M. A. Osborne,D. Sejdinovic,N. Ares,D. L. Craig,D. T. Lennon,L. C. Camenzind,D. M. Zumbühl,G. A. D. Briggs,M. A. Osborne
DOI: https://doi.org/10.1103/physrevx.14.011001
2024-01-05
Physical Review X
Abstract:The discrepancies between reality and simulation impede the optimization and scalability of solid-state quantum devices. Disorder induced by the unpredictable distribution of material defects is one of the major contributions to the reality gap. We bridge this gap using physics-aware machine learning, in particular, using an approach combining a physical model, deep learning, Gaussian random field, and Bayesian inference. This approach enables us to infer the disorder potential of a nanoscale electronic device from electron-transport data. This inference is validated by verifying the algorithm's predictions about the gate-voltage values required for a laterally defined quantum-dot device in AlGaAs/GaAs to produce current features corresponding to a double-quantum-dot regime. https://doi.org/10.1103/PhysRevX.14.011001 Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI. Published by the American Physical Society
physics, multidisciplinary