Non linear recombination processes : application to quantitative implantation characterization

B. Forget,D. Fournier,V. Gusev
DOI: https://doi.org/10.1051/JP4:1994737
1994-07-01
Abstract:Previous photoreflectance studies on intrinsic silicon have exposed the strong non linearities versus excitation power. Implanted silicon samples however, exhibit these non linearities. We present a non linear model based on Auger recombination that can explain the observed signal for both intrinsic and implanted samples.
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