Spontaneous Heterointerface Modulation by a Methylammonium Tetrafluoroborate Additive for a Narrow-Bandgap FAPbI3 Photoabsorber in Perovskite Solar Cells

Daisuke Kubota,Ryuzi Katoh,Hiroyuki Kanda,Hiroyuki Yaguchi,Takurou N Murakami,Naoyuki Nishimura
DOI: https://doi.org/10.1021/acsami.4c11784
2024-10-09
Abstract:Over the past decade, the photovoltaic (PV) performance of perovskite solar cells (PSCs) has been considerably improved with the development of perovskite photoabsorbers. Among these, formamidinium-lead-iodide (FAPbI3) is a promising photoabsorber owing to its narrow bandgap and is mainly used in n-i-p-structured PSCs. The property modulation of FAPbI3 photoabsorbers while retaining their narrow bandgap is imperative for further development of PSCs. Molecular tetrafluoroborate anion (BF4-)-based materials can be used as additives in perovskite layers to prevent bandgap widening, while facilitating perovskite crystal growth; thus, they are suitable for FAPbI3 photoabsorbers in principle. However, BF4--based additives for narrow-bandgap FAPbI3 photoabsorbers have not been developed. This is presumably because of the higher temperatures required for FAPbI3 formation than that for other wide-bandgap perovskites, which likely changes the effects of BF4-based additives from those for wide-bandgap perovskites. In this study, we verified the applicability of methylammonium tetrafluoroborate (MABF4) as an additive in narrow-bandgap FAPbI3 photoabsorbers for improving their PV performance primarily via the spontaneous modulation of the heterointerfaces between FAPbI3 and carrier-transport materials, rather than the bulk quality improvement of FAPbI3 perovskite. At the interface of the hole-transport material and FAPbI3, MABF4 addition effectively eliminates the surface defects in all FAPbI3 components, even in the absence of BF4- over the heated FAPbI3 surface, suggesting a defect-suppression mechanism that differs from that observed in conventional ones. Moreover, at the interface of FAPbI3 and the TiO2 electron-transport material, the BF4-derived species, which likely includes decomposed BF4- owing to the high-temperature heating, spontaneously segregates upon deposition, thereby modulating the heterointerface. Furthermore, in addition to the carrier mobility ratio in FAPbI3 (e-:h+ ≈ 7:3), a time-resolved microwave conductivity measurement revealed that MABF4 addition eliminates carrier traps at the heterointerfaces. Our findings provide insights into promising FAPbI3-based PSCs, offering a valuable tool for their further development.
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