Investigation of a-SiOx:H films as passivation layer in heterojunction interface

C. Yeh,Y. Chu,Chien-Chieh Lee,Y. Hsieh,Shian-ming Liu,Jenq-Yang Chang,I. Chen,Tomi T. T. Li
DOI: https://doi.org/10.1109/CSTIC.2015.7153397
2015-03-15
Abstract:In this study, the intrinsic hydrogenated amorphous silicon oxide (a-SiOx:H) thin films were prepared by Electron Cyclotron Resonance Chemical Vapor Deposition (ECR-CVD). High density plasma of ECR-CVD has many advantages: (1) faster deposition rate, (2) no electrode contamination, (3) low ion bombardment. The process parameters effect on a-SiOx:H thin films such as dilution ratio was investigated. In addition, this material will be applied to amorphous silicon / crystalline silicon heterojunction solar cells and improved the open-circuit voltage of solar cells.
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