1.1 μm-range low resistive VCSELs with buried type-II tunnel junctions

K. Yashiki,N. Suzuki,K. Fukatsu,T. Anan,H. Hatakeyama,M. Tsuji
DOI: https://doi.org/10.1109/ECOC.2006.4801257
2006-09-01
Abstract:We propose 1.1-μm-range VCSELs with buried Type-II tunnel junctions (BTJs). Due to the small electrical resistance of the Type-II tunnel junction, the chip resistance was reduced by half as compared with oxide confined VCSELs. The BTJ-VCSELs were lased up to 120°C.
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