Sub-Micrometer InP/InGaAs Heterojunction Bipolar Transistors with fT = 400 GHz and fmax > 500 GHz

D. Scott,P. Chang,D. Sawdai,L. Dang,J. Wang,M. Barsky,Wen Phan,B. Chan,B. Oyama,A. Gutierrez-Aitken,A. Oki
DOI: https://doi.org/10.1109/ICIPRM.2006.1634121
2006-06-05
Abstract:We report InP-based double heterojunction bipolar transistors (DHBTs) with emitter widths of 0.25 mum and RF performance of fT = 400 GHz and fmax >500 GHz. The HBT structure consists of an InP emitter with an abrupt emitter-base interface, a 300 compositionally graded InGaAs base region, and a 1200Aring collector. The scaled devices reported here have been integrated with a planar, multi-level interconnect process to produce static divide-by-2 circuits with maximum input frequencies greater than 150 GHz and small DDS circuits with output fclock up to 21 GHz. We believe that the device and interconnect technology reported here represents a combination of performance and integration suitable for future digital and mixed-signal applications while maintaining the manufacturability required for large circuit yield
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