Improving Thermal Stability and Interface State Density of High- $\kappa $ Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium

Yi-He Tsai,C. Chou,A. Shih,Yu-Hau Jau,W. Yeh,Yu-Hsien Lin,F. Ko,C. Chien

DOI: https://doi.org/10.1109/LED.2016.2613999

IF: 4.8157

2016-09-27

IEEE Electron Device Letters

Abstract:We propose a new HfGeO_x interfacial layer (IL) for the high-κ gate-stacks on p-type germanium substrate with improved thermal stability as compared with that of conventional GeO_x IL. We inserted an additional HfO2 layer after the formation of GeO_x in the HfO₂/Al₂O₃/GeO_x/Ge gate-stack by using plasma-enhanced atomic layer deposition. Through the use of post-deposition annealing and post-metal annealing, the new system exhibited greater thermal immunity and was stable up to 600 °C. We speculate that the improvement originates from the formation of HfGeO_x through the combination of HfO₂ and GeO_x, according to the thermodynamic data. By incorporating Hf into interfacial layer, the fabricated high-κ gate-stack with an equivalent oxide thickness of 1.2 nm, a low interface states density (D_it) of approximately 3.3×10¹¹ eV^-1 cm^-2, and an impressive gate leakage current of approximately 2.2 × 10^-6 A/cm² at V_FB -1V.