Photodetector of ZnO nanowires based on through-silicon via approach

Yi-Hao Chen,I-Tzu Huang,S. Chang,T. Hsueh
DOI: https://doi.org/10.1109/IITC-AMC.2016.7507704
2016-05-23
Abstract:A ZnO-nanowire photodetector was prepared using three-dimensional through silicon via (TSV) technology. The diameter and depth of the Si via were about 80 μm and 175 μm, respectively. Cu uniformly filled in each TSV, whose average resistance was about 1 mΩ. Upon illumination with UV light (= 330 nm), it was found that measured responsivities is 7.38×10-3 A/W for the 3D TSV ZnO nanowire photodetector biased at 8 V. Furthermore, a rejection ratio of approximately 170 was obtained for the 3D TSV ZnO nanowire photodetector with an applied bias of 8 V.
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