IVa-7 the effects of charge injection on gated-diode breakdown

R. Amantea,R. Muller
DOI: https://doi.org/10.1109/T-ED.1977.18954
IF: 3.1
1977-09-01
IEEE Transactions on Electron Devices
Abstract:storage cell‘ results in a single-gate structure which combines the storage and transfer functicns. The storage region of this cell contains a boron implant which effectively increases the local substrate doping. Thus for identical operating voltages, the width of the depletion region of the charge-coupled CC RAM cell is significantly sma.ller than that of the conventional one-transistor cell. Thus, ;an important advantage of the CC RAM cell is that the leakge current and refresh time is expected to be significarltly improved compared to the one-transistor or double-level polysilicon cell. This paper presents data which confirms :he leakage current prediction of the CC RAM cell. Leak,ige current data at 70°C shows the CC RAM cell to have a le3kage current density of about 40 nA/cm2, corresponding to 0.5 nA/cm2 at room temperature. This is 3-8 times lojver than that of the one-transistor cells that are used in .he dynamic memories today. Leakage current measurements on the CC RAM cell ,as a function of ambient temperature and storage region a-ea have allowed us to experimentally identify a contribution to leakage from around the periphery of the cell’ in addition to the expected contribution from the bulk depletion region and surface generation under the storage gate itself. A descrilotion of these experiments and a model for mechanisms wh ch contribute to the leakage will be discussed. These results are important to MOS dynamic memories in that he CC RAM cell offers a significant increase I,n refresh time. This refresh time advantage coupled with Ihe simple cell structure makes the CC RAM cell very attractwe for very large scale dynamic MOS memories.
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