A coplanar CMOS power switch

E. Habekotté,B. Hoefflinger,W. Renker,G. Zimmer
DOI: https://doi.org/10.1109/JSSC.1981.1051576
IF: 5.4
1981-06-01
IEEE Journal of Solid-State Circuits
Abstract:A 300 V power switch in a high-voltage CMOS technology compatible with a low-voltage MOS/bipolar technology is presented. This circuit can switch positive and negative 150 V pulses with rise and fall times of 100 ns for a 200 pF capacitive load. The switch has a low-voltage input control (/spl plusmn/15 V). Using earth-symmetrical non-overlapping high-voltage pulses as dynamic supply voltages, it is possible to reduce the power dissipation during the switching time considerably in comparison with the power dissipation of power switches, which use static (i.e., constant) supply voltages under the same conditions.
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