$D_{\rm it}$ Extraction From Conductance-Frequency Measurements using a Transmission-Line Model in Weak Inversion of $\hbox{poly/TiN/HfO}_{2}$ nMOSFETs

S. Sicre,M. M. De Souza
DOI: https://doi.org/10.1109/TED.2011.2179657
IF: 3.1
2012-01-23
IEEE Transactions on Electron Devices
Abstract:The density of interface states Dit in metal-gate/high-k dielectric MOSFETs is investigated in weak inversion from small-signal capacitance and conductance measurements using a transmission-line model. A presence of both, a large Dit, and a high channel resistance, i.e., the latter exacerbated by poor effective mobility, are demonstrated in capacitance-voltage ( CV) characteristics by a comparison of experiments with simulations using a Schrodinger-Poisson solver. Using a transmission-line network, the channel response and the density of interface states can be accurately modeled from the conductance-frequency characteristics. This technique is applied to HfO2/SiO2 dielectric MOSFETs with polysilicon and poly/TiN metal gates deposited and annealed at identical temperature. In such a condition, the density of interface states is twice as large as for a TiN metal gate.
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