High Gamma Value 3D-Stackable HK/MG-Stacked Tri-Gate Nanowire Poly-Si FETs With Embedded Source/Drain and Back Gate Using Low Thermal Budget Green Nanosecond Laser Crystallization Technology

Chih-Chao Yang,W. Huang,Tung-Ying Hsieh,Tsung-Ta Wu,Hsing-Hsiang Wang,C. Shen,W. Yeh,Jung-Hau Shiu,Yu-Hsiu Chen,Meng-Chyi Wu,J. Shieh

DOI: https://doi.org/10.1109/LED.2016.2537381

IF: 4.8157

2016-03-02

IEEE Electron Device Letters

Abstract:Three-dimensional sequentially stackable high-k/metal-gate-stacked tri-gate nanowire poly-Si FETs with embedded source/drain (e-S/D) and back gate were demonstrated. The highly crystallized channel, fabricated by green nanosecond laser crystallization, chemical mechanical polish, and post-surface modification processes, enhances the electrical property of the tri-gate nanowire FET. The e-S/D structure reduces the contact and series resistances caused by the nanowire structure. Thus, the fabricated n/p-type tri-gate nanowire poly-Si FETs exhibit steep subthreshold swings (96/125 mV/decade), high ON-currents (232/110 μA/μm), and ION/IOFF ratio (>105). Furthermore, the independent back gate with thin back gate oxide can easily adjust the threshold voltage of the tri-gate nanowire transistor and results in high gamma value (>0.05) FET realizing sequentially stacked and low Vdd (0.6 V) operable inverter.