Synaptic memristors based on BaTiO3 thin films irradiated by swift heavy ions for neuromorphic computing

Minghui Xu,Tao Liu,Hailian Li,Yong Liu,Pengshun Shan,Ruowei Wang,Weijin Kong,Minghao Zhang,Shuangqing Fan,Jie Su
DOI: https://doi.org/10.1039/d4mh00716f
2024-08-27
Abstract:Swift heavy ion (SHI) irradiation is an effective method for modulating the properties of thin oxide films by introducing defects, strains, and structural transformations. Here, we applied 516 MeV Xe31+ irradiation to BaTiO3 (BTO) thin films grown on Nb:SrTiO3 substrates to induce the generation of tracks and nanohillocks. Memristors with BTO films irradiated at a fluence of 5 × 1010 ions cm-2 displayed excellent retention and endurance characteristics. Moreover, the memristors exhibited highly stable synaptic plasticity functions such as excitatory/inhibitory post-synaptic currents (E/IPSC) and paired-pulse facilitation/depression (PPF/D). The memristors achieved a discrimination accuracy of 92.5% on given handwritten digit data by an artificial neural network with supervised learning. These results verify that the judicious application of SHI irradiation on thin oxide films is a viable strategy for exploring neuromorphic computation.
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