Effect of gain saturation and nonradiative recombination on the thermal characteristics of InAs/GaAs 1.3 /spl mu/m quantum dot lasers

I. Marko,N. Massé,S. Sweeney,A. Adams,I. Sellers,D. Mowbray,M. S. Skolnick,H. Liu,K. Groom
DOI: https://doi.org/10.1109/LEOS.2005.1548048
2005-12-05
Abstract:Gain saturation increases the radiative component, J/sub rad/, of the threshold current density, J/sub th/, and its contribution to the thermal sensitivity of J/sub th/ in short cavity or low QD density devices. However, the main cause of their thermal sensitivity is a strong non-radiative recombination.
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