Strained AlInN/GaN HEMTs on SiC With 2.1-A/mm Output Current and 104-GHz Cutoff Frequency

K. Chabak,M. Trejo,A. Crespo,D. Walker,Jinwei Yang,R. Gaska,M. Kossler,J. Gillespie,G. Jessen,V. Trimble,G. Via
DOI: https://doi.org/10.1109/LED.2010.2045099
IF: 4.8157
2010-04-15
IEEE Electron Device Letters
Abstract:We report on a dc/RF performance of lattice-strained AlInN/GaN high-electron mobility transistors (HEMTs) on SiC substrate. HEMT devices were fabricated with gate periphery of 2 × 150 μm with an 80-nm T-gate and ~2.5-μm source-drain spacing. Fabricated devices simultaneously demonstrated up to 2.11 A/mm with f<sub>t-ext</sub> = 104 GHz and f<sub>t-int</sub> = 113 GHz. The high performance is attributed to the combination of low R<sub>sh</sub> ~ 230 Ω/sq (μ ~ 1079 cm<sup>2</sup>/V · s, n<sub>s</sub> ~ 2.39 × 10<sup>13</sup> cm<sup>-2</sup>) and thin ~110-Å total barrier thickness with a short gate length. Other device parameters include R<sub>c</sub> = 0.29 Ω · mm, I<sub>g,leak</sub> = 27.9 μA/mm, g<sub>m,peak</sub> = 432 mS/mm, and V<sub>th</sub> = -5.8 V. To our knowledge, this is among the highest current densities reported for any HEMT operating with a unity current gain frequency exceeding 100 GHz.
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