Abstract:Because of the strong Coulomb interaction and quantum confinement effect, 2-dimensional transition metal dichalcogenides possess a stable excitonic population. To realize excitonic device applications, such as excitonic circuits, switches, and transistors, it is of paramount importance for understanding the optical properties of transition metal dichalcogenides. Furthermore, the strong quantum confinement in 2-dimensional space introduces exotic properties, such as enhanced phonon bottlenecking effect, many-body interaction of excitons, and ultrafast nonequilibrium exciton–exciton annihilation. Exciton diffusion is the primary energy dissipation process and a working horse in excitonic devices. In this work, we investigated time-resolved exciton propagation in monolayer semiconductors of WSe2, MoWSe2, and MoSe2, with a home-built femtosecond pump-probe microscope. We observed ultrafast exciton expansion behavior with an equivalent diffusivity of up to 502 cm2 s−1 at the initial delay time, followed by a slow linear diffusive regime (20.9 cm2 s−1) in the monolayer WSe2. The fast expansion behavior is attributed to energetic carrier-dominated superdiffusive behavior. We found that in the monolayers MoWSe2 and MoSe2, the energetic carrier-induced exciton expansion is much more effective, with diffusivity up to 668 and 2295 cm2 s−1, respectively. However, the “cold” exciton transport is trap limited in MoWSe2 and MoSe2, leading to negative diffusion behavior at later time. Our findings are helpful to better understand the ultrafast nonlinear diffusive behavior in strongly quantum-confined systems. It may be harnessed to break the limit of conventional slow diffusion of excitons for advancing more efficient and ultrafast optoelectronic devices.

Unveiling Spatiotemporal Diffusion of Hot Carriers Influenced by Spatial Nonuniform Hot Phonon Bottleneck Effect in Monolayer MoS2

Transient Suppression of Carrier Mobility Due to Hot Optical Phonons in Lead Bromide Perovskites.

Transient Superdiffusion of Energetic Carriers in Transition Metal Dichalcogenides Visualized by Ultrafast Pump-Probe Microscopy

Multiphysics Modeling and Simulation of Carrier Dynamics and Thermal Transport in Monolayer MoS2/WSe2 Heterojunction

Very Fast Hot Carrier Diffusion in Unconstrained MoS2 on a Glass Substrate: Discovered by Picosecond ET-Raman

Hot Carrier Cooling and Trapping in Atomically Thin WS2 Probed by Three-Pulse Femtosecond Spectroscopy

Momentum resolved ground/excited states and the ultra-fast excited state dynamics of monolayer MoS2

Unveiling Defect-Mediated Carrier Dynamics in Monolayer Semiconductors by Spatiotemporal Microwave Imaging

Ultrafast Carrier Thermalization and Cooling Dynamics in Few-Layer MoS2.

Uncovering Edge States and Electrical Inhomogeneity in MoS2 Field-Effect Transistors

Electron Transport and Device Physics in Monolayer Transition-Metal Dichalcogenides

Exciton Dynamics in Two-Dimensional MoS2 on a Hyperbolic Metamaterial-Based Nanophotonic Platform

Spatially heterogeneous ultrafast interfacial carrier dynamics of 2D-MoS2 flakes

Harnessing Hot Carriers in Two-Dimensional Materials

Modification of Thermal Transport in Few-Layer MoS2 by Atomic-Level Defect Engineering.

The Hot Carrier Diffusion Coefficient of Sub-10 Nm Virgin MoS2: Uncovered by Non-Contact Optical Probing

Multi-terminal electrical transport measurements of molybdenum disulphide using van der Waals heterostructure device platform

Ultrafast Carrier Dynamics in Two-Dimensional Electron Gas-Like K-doped MoS2

Analyzing the Carrier Mobility in Transition-metal Dichalcogenide MoS2 Field-effect Transistors

Beyond Perturbation: Role of Vacancy-Induced Localized Phonon States in Thermal Transport of Monolayer MoS2

Transient Nanoscopy of Exciton Dynamics in 2D Transition Metal Dichalcogenides