Metal–Oxide–High-$k$ -Oxide–Silicon Memory Device Using a Ti-Doped $\hbox{Dy}_{2}\hbox{O}_{3}$ Charge-Trapping Layer and $\hbox{Al}_{2}\hbox{O}_{3}$ Blocking Layer

Fa-Hsyang Chen,T. Pan,F. Chiu
DOI: https://doi.org/10.1109/TED.2011.2165285
IF: 3.1
2011-11-01
IEEE Transactions on Electron Devices
Abstract:In this paper, we propose Al/SiO<sub>2</sub>/Dy<sub>2</sub>O<sub>3</sub>/ SiO<sub>2</sub>/ Si, Al/SiO<sub>2</sub>/DyTi<sub>x</sub>O<sub>y</sub>/SiO<sub>2</sub>/Si, and Al/Al<sub>2</sub>O<sub>3</sub>/DyTi<sub>x</sub>O<sub>y</sub>/SiO<sub>2</sub>/Si as charge-trapping memory devices incorporating high-<i>k</i> Dy<sub>2</sub>O<sub>3</sub> and Ti-doped Dy<sub>2</sub>O<sub>3</sub> films as charge-trapping layers, and SiO<sub>2</sub> and Al<sub>2</sub>O<sub>3</sub> films as blocking layers. The Al/Al<sub>2</sub>O<sub>3</sub>/DyTi<sub>x</sub> O<sub>y</sub>/ SiO<sub>2</sub>/Si memory device exhibited a larger memory window of ~4.5 V (measured at a sweep voltage range of ±9 V), a smaller charge loss of ~20% (measured time up to 10<sup>6</sup>s and at 85<sup>°</sup>C), and better endurance (program/erase cycles up to 10<sup>4</sup>) than other devices. These results suggest higher probability for trapping the charge carrier due to the Ti content in the Dy<sub>2</sub>O<sub>3</sub> film, which produce a high dielectric constant and suppress the formation of the Dy-silicate layer, and create a deep trap level in the DyTi<sub>x</sub>O<sub>y</sub> film.
What problem does this paper attempt to address?