Exciton-population inversion and terahertz gain in semiconductors excited to resonance.

M. Kira,S. Koch
DOI: https://doi.org/10.1103/PhysRevLett.93.076402
IF: 8.6
2004-03-26
Physical Review Letters
Abstract:The buildup of exciton populations in resonantly laser excited semiconductors is studied microscopically. For excitation around the 2s-exciton resonance, it is shown that polarization with a strict s-type radial symmetry can be efficiently converted into an incoherent p-type population. As a consequence, inversion between the 2p and 1s exciton states can be obtained leading to the appearance of significant terahertz gain.
What problem does this paper attempt to address?