In‐Plane Chirality Control of a Charge Density Wave by Means of Shear Stress

Weiyan Qi,Stefano Ponzoni,Guénolé Huitric,Romain Grasset,Yannis Laplace,Laurent Cario,Alberto Zobelli,Marino Marsi,Evangelos Papalazarou,Alexandr Alekhin,Yann Gallais,Azzedine Bendounan,Suk Hyun Sung,Noah Schnitzer,Berit Hansen Goodge,Robert Hovden,Luca Perfetti
DOI: https://doi.org/10.1002/adma.202410950
IF: 29.4
2024-11-22
Advanced Materials
Abstract:The in‐plane chirality of a Charge Density Wave compound can be controlled by applying shear stress during thermal cycling through an achiral phase. This finding opens the view to optomechanical devices with tunable Raman activity. The transition metal dichalcogenide 1T‐TaS2 exhibits a Charge Density Wave (CDW) with in‐plane chirality. Due to the rich phase diagram, the Ferro‐Rotational Order (FRO) can be tuned by external stimuli. The FRO is studied by Angle‐Resolved Photoelectron Spectroscopy (ARPES), Raman spectroscopy, and Selected Area Electron Diffraction (SAED). The in‐plane chirality of the CDW is lost at the transition from Nearly‐Commensurate (NC) to In‐Commensurate (IC) phase and can be controlled by applying shear stress to the sample while cooling it through the transition from IC‐CDW to NC‐CDW. Based on these observations, a protocol is proposed to achieve reliable, non‐volatile state switching of the FRO configuration in 1T‐TaS2 bulk crystals. These results pave the way for new functional devices in which in‐plane chirality can be set on demand.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
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