Time-Resolved Terahertz Spectroscopy of Free Carrier Nonlinear Dynamics in Semiconductors

G. Sharma,L. Razzari,F. Su,François Blanchard,A. Ayesheshim,T. Cocker,L. Titova,H. Bandulet,Tsuneyuki Ozaki,J. Kieffer,Roberto Morandotti,M. Reid,Frank A. Hegmann
DOI: https://doi.org/10.1109/JPHOT.2010.2050873
IF: 2.4
2010-05-20
IEEE Photonics Journal
Abstract:Nonlinear dynamics of free carriers in direct bandgap semiconductors at terahertz (THz) frequencies is studied using the intense few-cycle source available at the Advanced Laser Light Source (ALLS). Techniques such as Z-scan and optical-pump/THz-probe are employed to explore nonlinear interactions in an n-doped InGaAs thin film and a photoexcited GaAs sample, respectively. The physical mechanism that gives rise to such interactions is found to be intervalley scattering. A simple Drude-based mathematical model that incorporates the intervalley scattering process is developed and agrees well with the THz response of free carriers in semiconductors.
What problem does this paper attempt to address?