The future of the use of spine surgery.

Joseph S. Cheng,K. Vohra,C. Wong,M. McGirt

DOI: https://doi.org/10.1227/01.neu.0000430316.94197.c6

IF: 5.315

2013-08-01

Neurosurgery

Abstract:

What problem does this paper attempt to address?

Thermoelectric Properties of Topological Insulator Lanthanum Phosphide Via First-Principles Study

Yu Zhou,Wang-Li Tao,Zhao-Yi Zeng,Xiang-Rong Chen,Qi-Feng Chen

DOI: https://doi.org/10.1063/1.5043170

IF: 2.877

2019-01-01

Journal of Applied Physics

Abstract:We systematically investigate the thermoelectric properties of lanthanum phosphide (LaP) using first-principles calculations together with the Boltzmann transport theory. The dynamic stability of LaP is confirmed based on phonon dispersion. The different atomic masses of La and P atoms lead to an acoustic-optical bandgap that prohibits scattering between acoustic and optical phonon modes. The lattice thermal conductivity κl is 3.19 W/mK at room temperature, which is less than that of LaAs because of the smaller group velocities and the larger Grüneisen parameter. The calculated phonon-mode contribution to κl, scattering rate, and mean free path may provide significant guidance to further theoretical and experimental research. The power factor reaches 0.012 W m−1 K−2 at a carrier concentration of 1.05×1020cm−3, which is comparable to the power factor of the typical thermoelectric material Bi2Te3. This reasonable power factor and thermal conductivity suggest that LaP is a promising thermoelectric material. The dependence of the figure of merit ZT on carrier concentration n and temperature T indicates that a high ZT can be obtained by increasing the temperature and tuning the carrier concentration.
Study of pnictides for photovoltaic applications

Jayant Kumar,Gopalakrishnan Sai Gautam

DOI: https://doi.org/10.1039/d2cp04453f

IF: 3.3

2023-03-17

Physical Chemistry Chemical Physics

Abstract:For the transition into a sustainable mode of energy usage, it is important to develop photovoltaic materials that exhibit better solar-to-electricity conversion efficiencies, a direct optimal band gap, and made of non-toxic, earth abundant elements compared to the state-of-the-art silicon photovoltaics. Here, we explore the non-redox-active pnictide chemical space, including binary A3B2, ternary AA'2B2, and quaternary AA'A"B2 compounds (A, A', A" = Ca, Sr, or Zn; B = N or P), as candidate beyond-Si photovoltaics using density functional theory calculations. Specifically, we evaluate the ground state configurations, band gaps, and 0 K thermodynamic stability for all 20 pnictide compositions considered, besides computing the formation energy of cation vacancies, anion vacancies, and cation anti-sites in a subset of candidate compounds. Importantly, we identify SrZn2N2, SrZn2P2, and CaZn2P2 to be promising candidates, exhibiting optimal (1.1-1.5 eV) hybrid-functional-calculated band gaps, stability at 0 K, and high resistance to point defects (formation energies >1 eV), while other possible candidates include ZnCa2N2 and ZnSr2N2, which may be susceptible to N-vacancy formation. We hope that our study will contribute to the practical development of pnictide semiconductors as beyond-silicon light absorbers.

chemistry, physical,physics, atomic, molecular & chemical
Studies on Structural, Dielectric, and Optical Properties of the Lanthanum Modified BF-BNT Perovskite for the Thermistor and Photovoltaic Applications

S. K. Parida

DOI: https://doi.org/10.1007/s42341-022-00396-7

2022-05-06

Transactions on Electrical and Electronic Materials

Abstract:The modified structure of BF-BNT (Bi 0.5 La 0.5 Fe) 0.25 (Bi 0.5 Na 0.5 Ti) 0.75 O 3 ) single perovskite is prepared by a conventional solid-state reaction technique. The structural analysis suggests a tetragonal crystal with space group P4bm (JCPDS file No. 01-070-4760). The average crystallite and lattice strains are 87.2 nm and 0.116% respectively. The dielectric study predicts negative temperature coefficient of resistance character while the presence of low dielectric loss makes the materials useful for energy storage devices. The analysis of the modulus study suggests the presence of a non-Debye type of relaxation process while a thermally activated relaxation process is confirmed from the study of ac conductivity. The presence of the depressed semicircular arcs in both Nyquist and Cole–Cole plots confirms the semiconductor nature of the sample. The study of the Raman spectrum confirms the presence of all atomic vibrations. The UV visible study provides the energy bandgap of 1.67 eV, suitable for the different optoelectronic devices.
First-principles Investigation of Photovoltaic Material Based on Lanthanide Metals

Aigerim Omirzak,Youxi Wang,Xinbo Ma,Zhenyu Li

DOI: https://doi.org/10.1016/j.commatsci.2023.112773

IF: 3.572

2024-01-01

Computational Materials Science

Abstract:Searching for photovoltaic materials with high efficiency conforms to the goal for accessing low carbon and sustainable energy. This work explores the properties of RA3X3 compounds (R = La, Sm, Gd, Tb, Dy, Ho, Er; A = Cd, Zn; X = As, P) through a screening process, focusing on the huge potential of RCd3P3 series for further investigation in photovoltaic applications. Results show that RCd3P3 series with a direct or quasi-direct bandgap have an ultra-low exciton binding energy, which is favorable for separating electron and hole pairs. Moreover, these candidates possess high optical absorption in the visible light regions, and the power conversion efficiency limit of RCd3P3 series can be as high as 24.5 % at the thickness of 4 mu m. These results could enrich the database of potential solar cells based on lanthanide materials.
Comprehensive investigation of Li-based novel quaternary Heusler LiTiPdZ (Z= Al, Ga, In) compounds for thermoelectric performance

Lokanksha Suktel,Sapan Mohan Saini,Sapan Mohan SMS Saini

DOI: https://doi.org/10.1088/1402-4896/ad39b3

2024-04-03

Physica Scripta

Abstract:In the present article, we used Density Functional Theory and the Boltzmann transport equation to study the structural, electronic, and thermoelectric (TE) properties along with phonon dynamics of recently discovered LiTiPdZ (Z = Al, Ga, In) quaternary Heusler (QH) compounds. We applied generalized gradient approximations (GGA) for band structure and density of states (DOS) calculations. Comprehensive investigations of electronic structure reveal that an indirect band gap of 0.77 eV, 0.793 eV and 0.611 eV for LiTiPdAl, LiTiPdGa, and LiTiPdIn, is there reflecting the semiconducting nature of these compounds. We find that Pd-4d states contribute to the conduction band DOS while Ti-3d states contribute significantly to DOS near Fermi energy (EF) in both valence and conduction band. Phonon dispersion spectra show that all the studied compounds are dynamically stable, as obtained frequency is only in positive range. We have calculated thermoelectric properties up to a fairly high temperature (1600 K), to check the compatibility of these compounds for high temperature TE application. A high value of ZT (~ 0.60 1600K) proposes these compounds as potential candidates for high temperature TE applications.

physics, multidisciplinary
Effect of anion (S[math] & Se[math]) replacement on photovoltaic properties in transition metal (Ba-Barium) chalcogenide perovskites

Naincy Pandit,Anusha Dubey,Tarun Kumar Joshi,Akash Shukla,Upasana Rani,Peeyush Kumar Kamlesh,Rajeev Gupta,Tanuj Kumar,Kulwinder Kaur,Ajay Singh Verma

DOI: https://doi.org/10.1142/s0217979225500596

2024-05-16

International Journal of Modern Physics B

Abstract:International Journal of Modern Physics B, Ahead of Print. Material scientists have stepped up their search for efficient materials in low-cost, high-stability, nontoxic energy conversion devices. In this paper, emerging materials inspire us to study one of the perovskite chalcogens made from alkaline-earth metals (Barelium). Therefore, we determined some fundamental properties with some application-based properties, which explained their applicability in energy conversion device fabrication by first-principles calculation within the WIEN2K Code. Structure stability has been verified by Birch–Murnaghan fits and thermal stability at different temperatures and pressure ranges is explained by Gibbs function in thermodynamic properties. By using modified Becke–Johnson (mBJ) potential, electronic and optical characteristics of these materials provide insight into their nature: they were revealed to be direct bandgap semiconductors with the calculated values of 1.77[math]eV (1.25[math]eV) for BaZrS3(BaZrSe3), respectively. Both materials exhibit transparency on low-energy striking photons and demonstrate absorption and optical conduction in the UV region. Both materials exhibit transparency on low-energy striking photons and demonstrate absorption and optical conduction in the UV region. In the thermoelectric parameter, the figure of merit (ZT) is unity at room temperature and decreases up to 0.98 with temperature increment which reveals that these materials will be helpful in thermoelectric devices. As per the application part, we carried out the calculation of the spectroscopic limited maximum efficiency (SLME) and found that efficiency increases from 6.5% to 27.1% (8.1% to 31.9%) for BaZrS3 (BaZrSe3), respectively. The film thickness increased from 100[math]nm to 1[math][math]m at room temperature and then stabilized. This emerging study shows that these materials can be used as an alert substance in energy conversion device fabrications and the proposed outcomes are in good acceptance with the experimental and other theoretical data. As per the optical and thermoelectric parameters of these materials, we infer that both are promising candidates in energy conversion device fabrication.

physics, condensed matter, applied, mathematical
Ultralow lattice thermal conductivity, negative thermal expansion, elastic and thermoelectric properties of Lanthanum Nitride: Insights from first-principle calculations

Rati Ray Banik,Swarup Ghosh,Joydeep Chowdhury

DOI: https://doi.org/10.1088/1402-4896/acc2ef

2023-03-11

Physica Scripta

Abstract:The ultralow lattice thermal conductivity, negative thermal expansion and thermoelectric properties for the face centered cubic phase of lanthanum nitride (LaN) have been explored for the first time from first-principle density functional theory and ab-initio molecular dynamics calculations. The elastic constants, phonon dispersion relations, mode Grüneisen parameter, phonon group velocity and phonon-phonon scattering rates have been studied to unveil the ultralow lattice thermal conductivity (κ l = 1.08 Wm -1 K -1 ) of the compound at room temperature (T = 300 K). The negative thermal expansion of LaN has been estimated from the mode Grüneisen parameter. The electronic band structure, hole-electron effective masses and the thermoelectric properties including the Seebeck coefficient, electrical conductivity, electronic thermal conductivity and thermoelectric power factor have been investigated to estimate the high thermoelectric figure of merit (ZT ~ 0.98) of the system at room temperature. We believe that the present study will help to unfold LaN for its applications in thermoelectric power generators, fibre-optic communications, fuel cells and in clean and global energy conservation.

physics, multidisciplinary
First principles study of thermo-physical and opto-electronic properties of NaCuTe, NaCuSe and NaScSn as potential photovoltaics

Madallah Yusuf,Felix O. Saouma,George S. Manyali,Job W. Wafula,Anthony Pembere

DOI: https://doi.org/10.1016/j.physb.2024.415954

IF: 2.988

2024-04-12

Physica B Condensed Matter

Abstract:In this comprehensive study, we delved into the electronic, structural, elastic, optical and thermodynamic properties of sodium-based ternary semiconductors i.e NaCuTe, NaCuSe and NaScSn. Employing first-principle calculations, we precisely determined various material properties. The lattice constants, bulk modulus and equilibrium total energies were derived using the Murnaghan equation of state and demonstrate a good agreement with other theoretical methods. Analysis of the absorption spectra allowed us to identify the active window of the electromagnetic spectrum for these materials. The determination of elastic constants provided crucial insights into the materials' ability to withstand external stress, revealing that the materials meet stability criteria with a ductile behavior. Electronic band structures and density of states calculations unveiled band gaps of 1.40 eV, 1.03 eV and 1.15 eV for NaCuTe, NaCuSe and NaScSn, respectively. This suggests their suitability for photovoltaic applications. Additionally, the materials exhibited desirable optical properties, characterized by efficient optical absorption with the highest peaks in the visible light and ultraviolet region of the electromagnetic spectrum, low reflectivity and a high dielectric constant. These findings collectively indicate the materials' potential for utilization as solar photovoltaics

physics, condensed matter
Synergistic modulation of SLME and thermal transport toward promising p‐type lead‐free halide semiconductors In2TiX6 (X = Br, I) via first principles analysis

Jaidev Kumbhakar,Jisha Annie Abraham,Anshuman Srivastava,K. L. Meena,Mumtaz Manzoor,Ayman A. Ghfar,Ramesh Sharma

DOI: https://doi.org/10.1002/qua.27424

2024-06-01

International Journal of Quantum Chemistry

Abstract:Abstract Lead halide perovskites have been replaced by the environmentally acceptable and effective lead‐free double perovskite material. Double perovskites are innovative compounds for sustainable energy and budding substitutes to organic as well as lead‐based solar cells. In the current study, it has been expounded on the structural, electronic, thermoelectric, as well as thermodynamic characteristics of newly designed double perovskites In 2 TiX 6 (X = Br, I) by means of ab‐initio computations relied on the FP‐LAPW tactics and semi‐classical Boltzmann transport theory with PBE‐GGA as exchange correlation potential. To obtain accurate value of band gaps (1.294 eV and 1.025 eV), TB‐mBJ approximation has been used along with PBE‐GGA. The best combinations of both compounds have spectroscopic limited maximum efficiency (SLME) values 33.96% and 31.63%, that are appropriate for solar cell absorbers, at 300 K, respectively. We have also computed Debye temperature and Grüneisen parameter to find the lattice thermal conductivity for both the investigated alloys. Thermoelectric properties have been labeled by Seebeck coefficient, electrical as well as thermal conductivities, and figure of merit. The peak values of Seebeck coefficient of 248 μV/K and 202 μV/K are observed for In 2 TiBr 6 and In 2 TiI 6 respectively in the p ‐type regions. Attained results illustrates that the investigated In 2 TiX 6 may be contender in thermoelectric due to their high figure of merit in low as moderate temperatures. Our results suggest that these materials are viable for use in thermoelectric devices.

chemistry, physical,physics, atomic, molecular & chemical,mathematics, interdisciplinary applications,quantum science & technology
Device Performance of the Mott Insulator LaVO 3 as a Photovoltaic Material

Lingfei Wang,Yongfeng Li,Ashok Bera,Chun Ma,Feng Jin,Kaidi Yuan,Wanjian Yin,Adrian David,Wei Chen,Wenbin Wu,Wilfrid Prellier,Suhuai Wei,Tom Wu

DOI: https://doi.org/10.1103/physrevapplied.3.064015

IF: 4.6

2015-06-22

Physical Review Applied

Abstract:Searching for solar-absorbing materials containing earth-abundant elements with chemical stability is of critical importance for advancing photovoltaic technologies. Mott insulators have been theoretically proposed as potential photovoltaic materials. In this paper, we evaluate their performance in solar cells by exploring the photovoltaic properties of Mott insulator LaVO3 (LVO). LVO films show an indirect band gap of 1.08 eV as well as strong light absorption over a wide wavelength range in the solar spectrum. First-principles calculations on the band structure of LVO further reveal that the d-d transitions within the upper and lower Mott-Hubbard bands and p-d transitions between the O 2p and V 3d band contribute to the absorption in visible and ultraviolet ranges, respectively. Transport measurements indicate strong carrier trapping and the formation of polarons in LVO. To utilize the strong light absorption of LVO and to overcome its poor carrier transport, we incorporate it as a light absorber in solar cells in conjunction with carrier transporters and evaluate its device performance. Our complementary experimental and theoretical results on such prototypical solar cells made of Mott-Hubbard transition-metal oxides pave the road for developing light-absorbing materials and photovoltaic devices based on strongly correlated electrons.

physics, applied
A first principle study of the perovskite lanthanum aluminate

Badal H Elias,Bahaa M Ilyas,Nawzat S Saadi

DOI: https://doi.org/10.1088/2053-1591/aad15f

IF: 2.025

2018-07-17

Materials Research Express

Abstract:A self-consistent first-principles calculation with a precise hybrid PBEsol functional, Density Functional Theory (DFT) have been used to investigate the stability, elastic, mechanical, electronic, acoustic and thermodynamic properties of the cubic perovskite Lithium Aluminate (LaAlO3). An investigation of the stability showed that the computed lattice parameter LaAlO3 is stable, results also show that the lattice of LaAlO3 becomes more distorted and deviates from the hydrostatic behavior as pressure is increased up to 11 GPa, after this limit, the structure encounter a phase shift, which is seen from the nature of the thermal properties of heat capacity. LaAlO3 is thermos conversion-efficient cubic perovskite with its strong phonon scattering interactions resides mostly unclear. The energy band structure appears to display an indirect band gap insulator, with Γ−R separating the valence and conduction bands. Pressure dependence of cubic elastic Moduli, elastic wave velocities, Debye temperature and the density of states of LaAlO3 were calculated, our results appear to converge with available experimental data. The elastic constants reveal the fact that the crystal is stable and show nature of crispness. The thermal characteristics were computed within the hybrid functional PBEsol using the Debye-Waller model and response functions. Lattice dynamics investigation of the perovskite thermoelectric LaAlO3 are investigated with the single-crystal first-principles simulations and compared against inelastic neutron scattering (INS) at 100 K. Our ab-initio calculations of LaAlO3 show a free asymmetry in the first nearest-neighbor peak. In addition, our first principles calculations data reveal stiffer bonding at the anion sites, which is in good agreement with the partial phonon densities of states from INS. The 4-dimensional phonon-dispersion surfaces of LaAlO3, have been mapped and it is found that the origins of the ionic potential an-harmonicity being responsible for the unique behavior and phonon properties of LaAlO3. The latter results provide clear evidence for the anharmonicity phonon distribution associated with the resonant bonding leading to a ferroelectric nature.

materials science, multidisciplinary
Improving the Optical and Thermoelectric Properties of Cs2InAgCl6 with Substitutional Doping: A DFT Insight

K. C. Bhamu,Enamul Haque,C.S. Praveen,Nandha Kumar,G. Yumnam,M. Anwar Hossain,Gautam Sharma

DOI: https://doi.org/10.1039/D0RA01840F

2020-01-21

Abstract:New generation Indium based lead-free Cs2InAgCl6 is a promising halide material in photovoltaic applications due to its good air stability and non-toxic behavior. But its wide band gap (>3 eV) is not suitable for solar spectrum and hence reducing the photoelectronic efficiency for device applications. Here we report a significant band gap reduction from 3.3 eV to 0.6 eV by substitutional doping and its effect on opto-electronic and opto-thermoelectric properties from first-principles study. The results predict that Sn/Pb and Ga & Cu co-doping enhance the density of states significantly near the valence band maximum (VBM) and thus reduce the band gap by shifting the VBM upward while the alkali-metals (K/Rb) slightly increase the band gap. A strong absorption peak near Shockley-Queisser limit is observed in co-doped case while in Sn/Pb-doped case, we notice a peak in the middle of the visible region of solar spectrum. The nature of band gap is indirect with Cu-Ga/Pb/Sn doping with a significant reduction in the band gap. We observe a significant increase in the power factor (PF) (2.03 mW/mK2) for n-type carrier in Pb-dpoing, which is ~3.5 times higher than the pristine case (0.6 mW/mK2) at 500 K.

Materials Science
Lanthanum containing barium stannate nanoparticles synthesized by cetyltriammonium bromide assisted wet chemistry route for application in perovskite solar cell

Astakala Anil Kumar,Ashok Kumar,J.K. Quamara

DOI: https://doi.org/10.1016/j.matpr.2019.06.172

2019-01-01

Materials Today: Proceedings

Abstract:In this paper, we report comparative photovoltaic performance of cetyltriammonium bromide assisted wet chemical route synthesized Ba0.94La 0.06SnO3 and sol-gel synthesized TiO2 nanoparticles using CH3NH3SnCl3 as absorber and NiO as hole transport layer. The X-ray diffraction patterns of Ba0.94La 0.06SnO3, TiO2 and NiO nanoparticles showed the formation of cubic, tetragonal and cubic phases, respectively with average crystallite size ∼ 25 nm. The X-ray diffraction pattern of CH3NH3SnCl3 nanoparticles exhibited the formation of monoclinic phase, with average crystallite size ∼ 5 nm. The band gap values of Ba0.94La 0.06SnO3, TiO2, NiO and CH3NH3SnCl3 nanoparticles are estimated as 3.6, 3.4, 3.5 and 2.8 eV, respectively. The silver contacts, which work as counter electrode, were thermally deposited, and device has been studied for power conversion efficiency under the illumination of ∼ 100 mW cm2.
Pb0.95La0.05Zr0.54Ti0.46O3 Thin Films For Photovoltaic Applications

Harshan Vasudevan Nampoori

DOI: https://doi.org/10.48550/arXiv.1304.1611

2013-04-05

Materials Science

Abstract:Ferroelectrics have shown potential as a promising alternative material for future photovoltaic applications. Observance of high open circuit voltages in ferroelectric thin films, have generated considerable interest in the field of ferroelectric photovoltaic in recent years. The field of ferroelectric photovoltaic is evolving and not yet completely understood compared to the semiconductor based photovoltaic technology. This dissertation investigates photovoltaic characteristics of ferroelectric films in an attempt to further the understanding of ferroelectric photovoltaic. This dissertation presents photovoltaic properties of ferroelectric Pb0.95La0.05Zr0.54Ti0.46O3 thin films. The films were fabricated by solution based method and spin coating technique. The post annealing process on these films was optimized to achieve the desired ferroelectric and dielectric properties. A measurement setup was established to study the PV characteristic of the devices. Dependence of current-voltage (I-V) behavior of the cells on parameters such as electrical poling, annealing temperature, nature of top electrodes, and intensity of illumination, were investigated. The photovoltaic response was shown to improve by using electrodes with low work functions. An electric circuit model was developed to simulate the behavior of a single ferroelectric photovoltaic cell and the dependence of open circuit voltage (Voc) and short circuit current (Isc) on light intensity.
A density functional theory study of the structural, mechanical, optoelectronics and thermoelectric properties of InGeX 3 (X = F, Cl) perovskites

Abrar Nazir,Ejaz Ahmad Khera,Mumtaz Manzoor,Bandar Ali Al-Asbahi,Yedluri Anil Kumar,Ramesh Sharma

DOI: https://doi.org/10.1016/j.poly.2024.117009

IF: 2.975

2024-04-29

Polyhedron

Abstract:Structural, electronic, lattice dynamics, optical, elastic, and thermoelectric features of Indium based Perovskite InGeX 3 (X = F, Cl) are studied by using WIEN2k code within density functional theory DFT. A level of the Boltzmann transport theory is used to derive electronic transport coefficients together with anticipated electronic relaxation times. These compounds exhibit stability and are cubic with the space group Pm-3m 221, according to the structural analysis. The band structure having the 2.15 eV and 1.29 eV band gap and density of state (DOS) are calculated for electronic characteristics, indicating that both compounds are semiconducting. For the analysis of elastic characteristics, elastic constants, bulk modulus (49.99, 22.69), Poisson's ratio (0.343, 0.261), anisotropy factor (0.52, 0.59), and Pugh's ratio (2.87, 1.75) are examined. The ductile nature of the compounds is described by Pugh's ratio, and the ionic nature can be ascertained by evaluating the Cauchy pressure. In the energy range of 0–10 eV, optical features like reflectivity, optical conductivity, refractive index, extinction coefficient and absorption coefficient are computed. These compounds broad-range absorption in the UV spectrum suggests that they could be good optoelectronic device candidates. The transport feature like Seebeck coefficient, thermal and lattice conductivity, power factor, electrical conductivity, and figure of merit zT (0.99, 0.98) can be calculated against temperature. The chemical potential against an excellent thermoelectric property of InGeX 3 (X = F, Cl) have high figure of merit due to high Seebeck and electrical conductivity. These predicted outcomes indicated that both compounds are suitable candidates for thermoelectric applications. Such compounds can replace with other renewable energy sources in thermoelectric devices because of their powerful thermoelectric response.

chemistry, inorganic & nuclear,crystallography
A DFT study of the physical properties of novel vanadium-based half-Heusler alloys VYAl (Y = Ni,Pd, and Pt) pertinent to their optoelectronics application

Dhan Raj Raj Lawati,Pitamber Shrestha,Shriram Sharma,Leela Pradhan Joshi,Rajendra Parajuli

DOI: https://doi.org/10.1088/1402-4896/ad591c

2024-06-19

Physica Scripta

Abstract:We have investigated three novel 18-valence electron count (VEC) vanadium-based half-Heusler alloys, VYAl (Y = Ni, Pd, and Pt), for their structural, mechanical, electronic, and optical properties using density functional theory (DFT). The computation of DFT was carried out employing Vienna Ab-initio Simulation Package (VASP) and all three alloys have exhibited structural, chemical, mechanical, and thermodynamic stability. We obtained the lattice constants of 5.520, 5.800, and 5.820 ̊A for VNiAl, VPdAl, and VPtAl, respectively. The elastic parameters imply a ductile and hard nature of the system and exhibit anisotropic behavior. Electronic band characterization demonstrated that all three alloys are semiconductors with direct narrow gaps at the Γ-point which is crucial for photovoltaic pplications. In addition to that, the high density of the band states near the Fermi level indicates a promising candidate for thermoelectric conversion. The influence of SOC interaction in the system generates a small shift in the bands. From the optical response, we infer that the studied compounds have exceptional light absorption and reflection quality, making them suitable for optoelectronics purposes.

physics, multidisciplinary
Structural Stability and High-Temperature Thermoelectric Performance of LiYPdSn Quaternary Heusler Compound

Jaspal Singh,Kulwinder Kaur,Megha Goyal,Yuhit Gupta,Aadil Fayaz Wani,Tavneet Kaur

DOI: https://doi.org/10.1016/j.ssc.2024.115784

IF: 1.934

2024-12-03

Solid State Communications

Abstract:In this research work, the electronic, mechanical, and thermoelectric properties of the recently discovered Li-based quaternary Heusler compound i.e. LiYPdSn are explored with the help of density functional theory and the Boltzmann transport equations. The LiYPdSn alloy has an indirect band gap of 0.41 eV that confirming its p-type semiconducting features. This material shows the mechanical and dynamical stability along with a maximum recorded ZT (Figure of Merit) of 0.52 at 1200K. The electrical conductivity i.e. ease of electric propagation is calculated as 4.43x10 6 Ω -1 m -1 at 600K for the p-type doping region, while in the n-type doping region, the maximum recorded value is 2.8x10 6 Ω -1 m -1 , similarly the leading thermoelectric performance i.e. Seebeck coefficient with a maximum value of 531.14 μV/K at 300K, declaring that its properties are awaking the interesting research perspective in future. The paper seems to be an outlet of various research properties and announces the presenting material to have valuable thermoelectric performance and hence the potential applications to manufacture the wired or rolled structural thermoelectric modules in the high-temperature regions.

physics, condensed matter
A comprehensive study of electronic and piezoelectric properties of Li-based Tin-halide perovskites from GGA and Meta-GGA

Celestine Lalengmawia,Zosiamliana Renthlei,Shivraj Gurung,Lalhriat Zuala,Lalrinthara Pachuau,Ningthoujam Surajkumar Singh,Lalmuanpuia Vanchhawng,Karthik Gopi,A. Yvaz,D. P. Rai

2024-12-07

Abstract:Wide bandgap semiconductors (WBGs) are predicted to be the potential materials for energy generation and storing. In this work, we used density functional theory (DFT) that incorporates generalized gradient approximation (GGA) and meta-generalized gradient approximation (mGGA) methods to explore the various properties of the LiSnCl3 and LiSnBr3 perovskites. The structural stabilities, charge transfer, electronic, optical, mechanical, and piezoelectric properties are studied. Herein, we report that these rarely studied materials are eco-friendly and look promising for optoelectronics and piezoelectric applications.

Materials Science
Exploring Ln(III)-Ion-Based Luminescent Species as Down-Shifters for Photovoltaic Solar Cells

Gabriela Brito-Santos,Cecilio Hernández-Rodríguez,Beatriz Gil-Hernández,Joaquín Sanchiz,Inocencio R Martín,Benjamín González-Díaz,Ricardo Guerrero-Lemus

DOI: https://doi.org/10.3390/ma16145068

2023-07-18

Abstract:In this work, we have compiled our research on lanthanide-based luminescent materials for use as down-shifter layers in photovoltaic (PV) mini-modules. The complexes we have prepared (C1-17), with formulas [Eu2(phen)2(bz)6] (C1), [Eu2(bphen)2(bz)6] (C2), [Eu(tta)3bphen] (C3), [Eu(bta)3pyz-phen] (C4), [Eu(tta)3pyz-phen] (C5), [Eu(bta)3me-phen] (C6), [Er(bta)3me-phen] (C7), [Yb(bta)3me-phen] (C8), [Gd(bta)3me-phen] (C9), [Yb(bta)3pyz-phen] (C10), [Er(tta)3pyz-phen] (C11), [Eu2(bz)4(tta)2(phen)2] (C12), [Gd2(bz)4(tta)2(phen)2] (C13), [EuTb(bz)4(tta)2(phen)2] (C14), [EuGd(bz)4(tta)2(phen)2] (C15), [Eu1.2Gd0.8(bz)4(tta)2(phen)2] (C16), and [Eu1.6Gd0.4(bz)4(tta)2(phen)2] (C17), can be grouped into three families based on their composition: Complexes C1-6 were synthesized using Eu3+ ions and phenanthroline derivatives as the neutral ligands and fluorinated β-diketonates as the anionic ligands. Complexes C7-11 were prepared with ligands similar to those of complexes C1-6 but were synthesized with Er3+, Yb3+, or Gd3+ ions. Complexes C12-17 have the general formula [M1M2(bz)4(tta)2(phen)2], where M1 and M2 can be Eu3+, Gd3+, or Tb3+ ions, and the ligands were benzoate (bz-), 2-thenoyltrifluoroacetone (tta-), and 1,10-phenanthroline (phen). Most of the complexes were characterized using X-ray techniques, and their photoluminescent properties were studied. We then assessed the impact of complexes in the C1-6 and C12-17 series on the EQE of PV mini-modules and examined the durability of one of the complexes (C6) in a climate chamber when embedded in PMMA and EVA films. This study emphasizes the methodology employed and the key findings, including enhanced mini-module efficiency. Additionally, we present promising results on the application of complex C6 in a bifacial solar cell.
Thermal properties of lanthanum modified lead zirconate titanate (PLZT), lithium niobate and lithium tantalate

T. H. Lin,D. Edwards,R. E. Reedy,K. Das,W. McGinnis,S. H. Lee

DOI: https://doi.org/10.1080/00150198808223238

1988-01-01

Ferroelectrics

Abstract:Fabrication of optical information processing chips involves a lot of thermal processing with silicon and electro-optic material. The information of thermal properties becomes important in this technology. Thermal conductivity, thermal diffusivity and specific heat of ceramic lanthanum modified lead zirconate titanate (PLZT), single crystal lithium tantalate (LiTaO3) and lithium niobate (LiNbO3) have been measured. Measurements were made over various temperature ranges (up to 400°C). The techniques used to make the measurements are described. Comparison is made to available data.

materials science, multidisciplinary,physics, condensed matter

The future of the use of spine surgery.

Thermoelectric Properties of Topological Insulator Lanthanum Phosphide Via First-Principles Study

Study of pnictides for photovoltaic applications

Studies on Structural, Dielectric, and Optical Properties of the Lanthanum Modified BF-BNT Perovskite for the Thermistor and Photovoltaic Applications

First-principles Investigation of Photovoltaic Material Based on Lanthanide Metals

Comprehensive investigation of Li-based novel quaternary Heusler LiTiPdZ (Z= Al, Ga, In) compounds for thermoelectric performance

Effect of anion (S[math] & Se[math]) replacement on photovoltaic properties in transition metal (Ba-Barium) chalcogenide perovskites

Ultralow lattice thermal conductivity, negative thermal expansion, elastic and thermoelectric properties of Lanthanum Nitride: Insights from first-principle calculations

First principles study of thermo-physical and opto-electronic properties of NaCuTe, NaCuSe and NaScSn as potential photovoltaics

Synergistic modulation of SLME and thermal transport toward promising p‐type lead‐free halide semiconductors In2TiX6 (X = Br, I) via first principles analysis

Device Performance of the Mott Insulator LaVO 3 as a Photovoltaic Material

A first principle study of the perovskite lanthanum aluminate

Improving the Optical and Thermoelectric Properties of Cs2InAgCl6 with Substitutional Doping: A DFT Insight

Lanthanum containing barium stannate nanoparticles synthesized by cetyltriammonium bromide assisted wet chemistry route for application in perovskite solar cell

Pb0.95La0.05Zr0.54Ti0.46O3 Thin Films For Photovoltaic Applications

A density functional theory study of the structural, mechanical, optoelectronics and thermoelectric properties of InGeX 3 (X = F, Cl) perovskites

A DFT study of the physical properties of novel vanadium-based half-Heusler alloys VYAl (Y = Ni,Pd, and Pt) pertinent to their optoelectronics application

Structural Stability and High-Temperature Thermoelectric Performance of LiYPdSn Quaternary Heusler Compound

A comprehensive study of electronic and piezoelectric properties of Li-based Tin-halide perovskites from GGA and Meta-GGA

Exploring Ln(III)-Ion-Based Luminescent Species as Down-Shifters for Photovoltaic Solar Cells

Thermal properties of lanthanum modified lead zirconate titanate (PLZT), lithium niobate and lithium tantalate