Enhanced Ultraviolet Response of ${\rm p}\hbox{-}{\rm Si}/{\rm SiO}_{x}/{\rm i}\hbox{-}{\rm ZnO}/{\rm n}\hbox{-}{\rm ZnO}$ Photodetectors

J. Hwang,Din-Han Wu,S. Hwang
DOI: https://doi.org/10.1109/LPT.2014.2314862
IF: 2.6
2014-06-01
IEEE Photonics Technology Letters
Abstract:Ultraviolet (UV) response of p-Si/i-ZnO/n-ZnO (p-i-n) heterojunction photodetectors (HPDs) was dramatically enhanced by inserting a thin SiOx layer to form a p-Si/SiOx/ i-ZnO/n-ZnO structure. It was found that the leakage current of p-i-n HPDs is largely reduced by about three orders compared with that of conventional p-n HPDs. Photocurrent measurements show that the UV-generated carriers are first accelerated by the electric field in i-ZnO and then tunnel through the thin SiOx layer instead of being trapped by the interface states at the p-Si/ i-ZnO interface. This increases the UV response and consequently, the UV-to-visible rejection ratio is enhanced from 7 for the p-i-n HPDs without SiOx layer to 112 for the HPDs with SiOx insertion.
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