A new empirical I-V model for NMOS and PMOS transistors

F. I. Hirata,M. Muller,Yang Ni,C. Gimenes
Abstract:This paper describes a new empirical model, capable of modeling with high accuracy the current-voltage (I-V) characteristics of metal-oxide semiconductor (MOS) transistors of n-type (nMOS) and p-type (pMOS). The I-V model presents a simplified parameters extraction method, easy to obtain and to implement using computer aide design (CAD) software. The model was validated under DC and transient simulations. The extraction procedure and results are described in the article.
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