State-of-the-art wide band-gap semiconductors for power electronic devices

H. Matsunami
DOI: https://doi.org/10.1109/IMFEDK.2004.1566388
2004-07-26
Abstract:In this paper, state-of-the-art wide band-gap semiconductors is described mainly for SiC considering the application for power electronic devices including some of nitride-based devices.
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