A (35 – 45) GHz low power direct-conversion Gilbert-cell mixer in 0.13µm GaAs pHEMT technology

A. Khy,B. Huyart
2010-11-01
Abstract:This paper presents the design and performance of a (35 – 45)GHz low power Gilbert-cell mixer realized in 0.13µm GaAs pHEMT technology dedicated to direct-conversion receivers. This mixer achieves moderate conversion gain (Gc = 4 ± 2dB) and high LO/RF isolation (ILO/RF >25dB) thanks to its double-balanced architecture. As for linearity, the circuit shows average performance with measured input 3rd order interception point (IIP3 = 3dBm) and input 1dB compression point (Pin@1dB = − 8dBm) at 42GHz. This mixer is mainly characterized both by low DC power consumption (PDC=57mW) and low LO power drive (PLO =−3dBm). Indeed, DC and LO levels required by other millimetre-wave Gilbert-cell mixers are generally much higher. This 2mm×1.5mm chip, that was fabricated using the D01PH (0.13µm GaAs depletion mode pHEMT) process provided by the OMMIC foundry is one of the very few millimetre-wave Gilbert-cell mixers realized in GaAs pHEMT technology published so far.
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