Abstract:The development of high-speed and high-brightness vertical-cavity surface-emitting lasers (VCSELs), which can serve as an efficient light source for optical wireless communication (OWC), play a crucial role in growth of the next generation of wireless communication networks, e.g., 6 G and satellite communications. In this work, by optimizing the size of the Zn-diffusion and oxide-relief apertures in a high-speed 850 nm VCSEL, we obtain record-high brightness (2.9 MW<inline-formula> <tex-math notation="LaTeX">${\mathrm {cm}}^{-2}{\mathrm {sr}}^{-1}$ </tex-math></inline-formula> at 10 mW output) with single polarized and (quasi-) single-mode (SM) outputs under continuous wave (CW) operation. However, such high brightness output comes at the cost of spatial hole burning (SHB) effect and degraded quality of 25 Gbit/sec eye patterns. In addition, an SM VSCEL array structure is usually needed to further boost the total available optical power for long-reach OWC. Here, a novel (quasi-) SM VCSEL array structure is demonstrated which releases the trade-off between the performances of brightness and eye-pattern quality. Our demonstrated array has a special crisscross mesa connecting neighboring VCSEL units and an extra electroplated copper substrate integrated on the backside of the chip. Compared to the reference array without the copper substrate and connected active mesas, the demonstrated array exhibits a higher (quasi-) SM output power, narrower divergence angle, larger orthogonal polarization mode suppression ratio (OPSR), and flatter E-O response. This in turn leads to smaller jitter and less noise in the measured 12.5 Gbit/sec eye-patterns. The demonstrated <inline-formula> <tex-math notation="LaTeX">$7\times 7$ </tex-math></inline-formula> array exhibits a maximum SM power of around 90 mW with a 1/<inline-formula> <tex-math notation="LaTeX">$\text{e}^{2}$ </tex-math></inline-formula> divergence angle as narrow as 7<sup>o</sup> (FWHM: 5<sup>o</sup>), single polarized output (10 dB OPSR), decent relative intensity noise performance (<−130 dB/Hz) and clear 12.5 Gbit/sec eye-opening. Such new device with remarkable static/dynamic performances has strong potential to further improve the product of the linking distance and data rate in the next generation of OWC channels.

Harnessing the capabilities of VCSELs: unlocking the potential for advanced integrated photonic devices and systems

Long-wavelength vertical-cavity surface-emitting lasers

Metasurface integrated Vertical Cavity Surface Emitting Lasers for programmable directional lasing emissions

Advances in High-Power Vertical-Cavity Surface-Emitting Lasers

Photonic neuromorphic computing using vertical cavity semiconductor lasers

Metasurface Enabled On‐Chip Generation and Manipulation of Vector Beams from Vertical Cavity Surface‐Emitting Lasers

Twenty-milliwatt, high-power, high-efficiency, single-mode, multi-junction vertical-cavity surface-emitting lasers using surface microstructures

Efficient Hybrid Integration of Long-Wavelength VCSELs on Silicon Photonic Circuits

Optical Uplink, D2D and IoT Links Based on VCSEL Array: Analysis and Demonstration

Vertical-external-cavity surface-emitting lasers and quantum dot lasers

Novel Semiconductor Lasers and Integrated Photonic Devices

Twenty-milliwatt, High-Power, High-Efficiency, Single-Mode, Multijunction Vertical-Cavity Surface-Emitting Lasers Using Surface Microstructures

100 Gb/s VCSEL Based Optical Interconnects Enabled by Multimode Full-Link Optimization

Development of GaN-Based Vertical-Cavity Surface-Emitting Lasers

The Design and Fabrication of High Efficiency Low Beam Divergence 850 nm VCSELs for High Capacity Optical Transmission

High-Brightness, High-Speed, and Low-Noise VCSEL Arrays for Optical Wireless Communication

Application of VCSEL in Bio-Sensing Atomic Magnetometers

High-power VCSELs Single Devices and 2-D Arrays

Hexagonal Transverse Coupled Cavity VCSEL Redefining the High-Speed Lasers

Design and Simulation of Integration of Vertical Cavity Surface Emitting Lasers and Heterojunction Bipolar Transistor

&Lt;title>vcsel-Based Optoelectronic Multiple-Chip Modules</title>