Interfacial Engineering of Wide‐Bandgap Perovskites for Efficient Perovskite/CZTSSe Tandem Solar Cells
Deng Wang,Hongling Guo,Xin Wu,Xiang Deng,Fengzhu Li,Zhen Li,Francis Lin,Zonglong Zhu,Yi Zhang,Baomin Xu,Alex K.‐Y. Jen
DOI: https://doi.org/10.1002/adfm.202107359
IF: 19
2021-10-04
Advanced Functional Materials
Abstract:Wide-bandgap perovskites have attracted substantial attention due to their important role in serving as a top absorber in tandem solar cells (TSCs). However, wide-bandgap perovskite solar cells (PVSCs) typically suffer from severe non-radiative recombination loss and therefore exhibit high open-circuit voltage (VOC) deficits. To address these issues, a 2D octyl-diammonium lead iodide interlayer is adopted onto the hole-transporting layer to induce the formation of an ultrathin quasi-2D perovskite that is close to the hole-selective interface. This approach not only accelerates hole transfer and retards hole accumulation but also reduces the trap density in the perovskite layer on top, thereby efficiently suppresses non-radiative recombination pathways. Consequently, the champion wide-bandgap device (≈1.66 eV) exhibits a power conversion efficiency (PCE) of 21.05% with a VOC of 1.23 V, where the VOC deficit of 0.43 V is among the lowest values for inverted wide-bandgap PVSCs. Moreover, by stacking a semi-transparent perovskite top cell on a 1.1 eV Cu2ZnSn(S,Se)4 (CZTSSe) bottom cell, a 22.27% PCE was achieved on a perovskite/CZTSSe four-terminal tandem solar cell, paving the way for all-solution-processed, low-cost, and efficient TSCs with mitigated energy loss in the wide-bandgap top cells.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology