Ab initio determination of the structure of a grain boundary by simulated quenching.

Mike C. Payne,P. Bristowe,J. Joannopoulos
DOI: https://doi.org/10.1103/PHYSREVLETT.58.1348
IF: 8.6
1987-03-30
Physical Review Letters
Abstract:Results of the first completely ab-initio investigation of the microscopic structure of a grain boundary in a semiconductor are presented. Using the molecular dynamics simulated annealing method for performing total energy calculations within the local density functional and pseudopotential approximations, the ..sigma.. = 5(001) twist boundary in germanium is studied. A number of rotation-and-translation states are investigated leading to a prediction for the structure of this geometry. Evidence for the possible presence of novel defects and glass-like tunneling mode states at grain boundaries is presented.
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