Methodology for performing RF reliability experiments on a generic test structure

G. Sasse,R. J. de Vries,J. Schmitz
DOI: https://doi.org/10.1109/ICMTS.2007.374478
2007-03-19
Abstract:This paper discusses a new technique developed for generating well defined RF large voltage swing signals for on wafer experiments. This technique can be employed for performing a broad range of different RF reliability experiments on one generic test structure. The frequency dependence of a gate-oxide wear out stress was investigated using this methodology for frequencies of up to 1 GHz.
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