Competitive behavior between the piezoelectric and piezoresistive effects in monolayer WS2 photodetector

Yongfeng Pei,Yufan Kang,Dong He,Xinyi Zhou,MingJun Ma,Changzhong Jiang,Wenqing Li,Xiangheng Xiao

DOI: https://doi.org/10.1063/5.0189689

IF: 4

2024-02-12

Applied Physics Letters

Abstract:The strain induced piezoelectric and piezoresistive effects have been regarded as promising methods to regulate the photoelectric properties of two-dimensional transition metal dichalcogenides. However, the distinction between the influence of piezoelectric and piezoresistive effects on devices is ambiguous. Here, piezo-phototronic photodetectors based on monolayer WS2 were fabricated to investigate the competitive behavior of the piezoelectric and piezoresistive effects. We have shown that the piezoresistive effect dominates the photocurrent enhancement through narrowing the bandgap under small strain. With increasing strain, the influence of piezoelectric effect became more and more obvious, and it dominated the photo-induced carrier transport behavior through polarization charges accumulated at the metal–semiconductor contact interface when the strain exceeded 0.78%. Under the strain condition, the modulation of strain on photocurrent reached as high as 1400%.

physics, applied