Abstract:This study examines effects of various catalysts on the growth of efficient, large‐area, and high‐quality MoSe2 monolayers, and MoSe2–WSe2 and WSe2–MoSe2 heterostructures. Mixed salt catalysts (NaCl/NaNO3 and PTAS/NaCl/NaNO3) are found to enable a rapid synthesis and high‐quality growth at near‐atmospheric pressure, offering a promising route for cost‐effective optoelectronic devices based on 2D‐TMD heterostructures. A scalable growth of atomically‐thin 2D transition metal dichalcogenides (TMDs) with defect‐free large‐area surfaces is crucial for developing high‐performing optoelectronic devices. Herein, a method to grow large‐area, high‐quality MoSe2 monolayers, MoSe2–WSe2, and WSe2–MoSe2 lateral heterostructures using molten salt‐based chemical vapor deposition (CVD) is systematically reported. First, effects of isolated inorganic (sodium chloride (NaCl) and sodium nitrate (NaNO3)), organic (Perylene–3,4,9,10–tetracarboxylic acid tetrapotassium salt (PTAS), mixed inorganic (NaCl/NaNO3), and hybrid organic–inorganic (PTAS/NaCl/NaNO3) salt catalysts on the CVD growth and optoelectronic quality of MoSe2 monolayers and their lateral heterostructures with WSe2 in MoSe2–WSe2 and WSe2–MoSe2 assemblies are investigated. Results show that molten salt catalysts (NaCl/NaNO3 and PTAS/NaCl/NaNO3) support high‐quality, large‐area growth of MoSe2 monolayers with low defect density. The mixed inorganic salt supports growth of MoSe2–WSe2 lateral heterostructures but not their counterpart. Meanwhile, WSe2–MoSe2 lateral heterostructures are optimally grown, supported by the hybrid organic–inorganic salt. These results are ascribed to the difference in the associated kinetic and thermodynamic mechanisms for the growths of MoSe2 and WSe2 as starting materials. Last, it is confirmed that optoelectronic quality of realized heterostructures and monolayers is improved compared to their mechanically exfoliated counterparts. The obtained high‐quality, large‐area 2D TMD heterostructures can be useful for various optoelectronic applications.

Low-temperature growth of MoSe2 and WSe2 nanostructures on flexible Mo and W metal foils

Wafer‐scale Single‐crystalline MoSe2 and WSe2 Monolayers Grown by Molecular‐beam Epitaxy at Low‐temperature — the Role of Island‐substrate Interaction and Surface Steps

Preparation of Single-Layer MoS(2x)Se2(1-x) and Mo(x)W(1-x)S2 Nanosheets with High-Concentration Metallic 1T Phase.

Growth and characterization of crystalline Bi2Se3 thin films on flexible metal foils by magnetron sputtering system

Precise Construction and Growth of Submillimeter Two-Dimensional WSe2 and MoSe2 Monolayers

Chemical Vapor Deposition Of Large-Size Monolayer Mose2 Crystals On Molten Glass

Molecular Beam Epitaxy Of Highly Crystalline Monolayer Molybdenum Disulfide On Hexagonal Boron Nitride

Growth of High-Quality Monolayer Transition Metal Dichalcogenide Nanocrystals by Chemical Vapor Deposition and Their Photoluminescence and Electrocatalytic Properties

Low wavenumber Raman spectroscopy of highly crystalline MoSe2 grown by chemical vapor deposition

Rapid Growth of Monolayer MoSe 2 Films for Large‐Area Electronics

MoSe2 and WSe2 Nanofilms with Vertically Aligned Molecular Layers on Curved and Rough Surfaces.

Vapor Phase Epitaxial Growth of Ultrathin Nonlayered-CoSe/WSe2 Heterostructure Moiré Superlattices

Chemical Vapor Deposition Growth of Monolayer WSe2 with Tunable Device Characteristics and Growth Mechanism Study

Hybrid Alkali Salt Catalysts‐Promoted CVD Growth of 2D MoSe2–WSe2 and WSe2–MoSe2 Lateral Heterostructures

Large Area Vapor Phase Growth and Characterization of MoS2 Atomic Layers on SiO2 Substrate

Towards Low-Temperature CVD Synthesis and Characterization of Mono- or Few-Layer Molybdenum Disulfide

Molecular beam epitaxial growth of MoSe2 on graphite, CaF2 and graphene

Direct and Scalable Chemical Vapor Deposition of Ultrathin Low-Noise MoS2 Membranes on Apertures

Large-area Synthesis of Monolayer and Few-Layer MoSe2 Films on SiO2 Substrates.

Controlled Growth of Atomically Thin MoSe 2 Films and Nanoribbons by Chemical Vapor Deposition

Structural and electronic properties of MoS 2 and MoSe 2 monolayers grown by chemical vapor deposition on Au(111)