GaInN light-emitting diodes with omnidirectional reflectors

T. Gessmann,Yun-Li Li,E. Schubert,J. Graff,J. Sheu
DOI: https://doi.org/10.1117/12.479771
2003-07-03
Abstract:A high-reflectivity omni directional reflector (ODR) has been incorporated into a GaInN light-emitting diode (LED) structure. The ODR comprises a transparent, electrically conductive quarter-wave layer of indium tin oxide clad by silver and serves as an ohmic contact to p-type GaN. It is shown that ODR-LEDs have low optical losses and high extraction efficiency. Mesa-structure GaInN/GaN ODR-LEDs emitting in the blue wavelength range are demonstrated and compared to GaInN/GaN LEDs with semitransparent Ni/Au top contacts. The extraction efficiency of ODR-LEDs is higher as compared to conventional LEDs with Ni/Au contacts.
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