Spin relaxation time dependence on optical pumping intensity in GaAs:Mn

V. Burobina,C. Binek
DOI: https://doi.org/10.1063/1.4874218
2014-04-30
Abstract:We analyze the dependence of electron spin relaxation time on optical pumping intensity in a partially compensated acceptor semiconductor GaAs:Mn using analytic solutions for the kinetic equations of the charge carrier concentrations. Our results are applied to previous experimental data of spin-relaxation time vs. excitation power for magnetic concentrations of approximately 1017 cm−3. The agreement of our analytic solutions with the experimental data supports the mechanism of the earlier-reported atypically long electron-spin relaxation time in the magnetic semiconductor.
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