A 0.18-$\mu{\hbox {m}}$ CMOS Balanced Amplifier for 24-GHz Applications

Jun-De Jin,S. Hsu
DOI: https://doi.org/10.1109/JSSC.2007.914292
IF: 5.4
2008-01-31
IEEE Journal of Solid-State Circuits
Abstract:A 24-GHz balanced amplifier (BA) with a 45-dB gain is realized in 0.18-mum CMOS technology. An effective technique, pi-type parallel resonance, is proposed to boost the high-frequency gain of a MOSFET by resonating out the inherent capacitances. The miniaturized lumped-element coupler in the circuit occupies a chip area of only ~2% compared to that of the conventional transmission-line coupler. The BA consumes 123 mW from a supply voltage of 1 V. To the best of the authors' knowledge, the proposed CMOS BA presents the highest gain of 45.0 dB with a chip area of 0.97 times 0.63 mm2 (core area: 0.78 times 0.43 mm2) among the published narrowband amplifiers with similar technologies and operation frequencies.
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