Growth of ZnO and indium-doped ZnO structures for dye-sensitized solar cells

Ya-Fen Wu,H. Hsu,Wei-You Chen,Jiunn-Chyi Lee

DOI: https://doi.org/10.1109/ICIPRM.2016.7528637

2016-06-26

Abstract:Summary form only given. ZnO and indium-doped ZnO structures were prepared by hydrothermal method deposited for different time duration. Scanning electron microscopy (SEM) measurements show that flower-like crystals form during the synthesis. X-ray diffraction (XRD) and energy dispersive X-ray spectroscopy (EDS) measurements confirm the incorporation of the dopant ion into the crystalline lattice of ZnO. The effects of indium doping on the optical properties of ZnO structures were studied by temperature dependent photoluminescence (PL) measurements. Observing the measured results, the samples show visible emission in the region of 1.8 eV and the PL intensities increase for indium-doped samples. Solar cells were prepared by immersing the samples into N-719 dye solution. From the measured photocurrent-voltage characteristics, we obtain that power conversion efficiency improved for indium-doped ZnO samples. It is found that the indium-doping acting as an important role in the formation of ZnO structures and the resulted power conversion efficiency of dye-sensitized solar cells.