RF noise performance of low power InAs/AlSb HFETs

J. Bergman,G. Nagy,G. Sullivan,B. Brar,C. Kadow,H. Lin,A. Gossard,M. Rodwell
DOI: https://doi.org/10.1109/DRC.2003.1226909
2003-06-23
Abstract:In this paper, we report on the complete RF noise characteristics of a 0.25 /spl mu/m gate-length InAs/AlSb HFET exhibiting a minimum noise figure F/sub min/ less than 1 dB from 2-25 GHz. Energy band diagram and the DC characteristics of the HFET were analysed.
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