An innovative concentrator system based on Cu(In,Ga)Se2 microcells

M. Paire,L. Lombez,S. Collin,J. Pelouard,D. Lincot,J. Guillemoles

DOI: https://doi.org/10.1109/PVSC.2014.6925545

2014-06-08

Abstract:In this work we look at a new type of concentrator photovoltaic material, Cu(In,Ga)Se2. Cu(In,Ga)Se2 solar cells are polycrystalline thin film devices, that can be deposited by a variety of techniques. A few concentrating experiments were carried out[1]-[3], but limited to low concentrations to avoid excessive heating of these cells grown on glass substrate, and spreading losses in the ZnO:Al window layer (10 - 40 ohm/sq). We proposed to use a microcell architecture [4], [5], with lateral dimension varying from a few μm to hundreds of μm, to overcome these limitations. We show here that Cu(In,Ga)Se2 devices can work well without detrimental signals from the edges up to very small sizes (10-5 cm2). The lower crystallographic quality of the Cu(In,Ga)Se2 cells may well be in fact an advantage to go micrometric devices A 5% absolute efficiency increase on Cu(In,Ga)Se2 microcells at 475 suns is observed. Voc increases up to several thousand suns, temperature increment stays under 20°C at 1000 suns. Features of the high illumination regime are highlighted and modeled.