GaAsSb resonant-cavity-enhanced photodetector operating at 1.3 μm

X. Sun,J. Hsu,X.G. Zheng,J. Campbell,A. Holmes
DOI: https://doi.org/10.1109/68.998724
IF: 2.6
2002-08-07
IEEE Photonics Technology Letters
Abstract:In this letter, we demonstrate a GaAsSb resonant-cavity-enhanced p-i-n photodetector grown on a GaAs substrate. The device exhibited a peak external quantum efficiency of 54% at the wavelength of 1.3 /spl mu/m and a full-width at half-maximum of 8 nm. The breakdown voltage was 12 V and avalanche gain up to ten was observed. The absorption coefficient (/spl alpha/) of GaAs/sub 0.65/Sb/sub 0.35/ at 1.3 /spl mu/m is estimated to be /spl sim/7.3/spl times/10/sup 3//cm.
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