Optical-bias-enhanced transient photocurrent in amorphous silicon.

Chen,Tai

DOI: https://doi.org/10.1103/PHYSREVB.40.9652

1989-11-15

Abstract:Transient photocurrent in a-Si:H film is increased by a factor of more than 10 due to optical-bias illumination. The transient photocurrent is found to decay exponentially shortly after the light pulse is turned off. The exponential-decay time constant of the transient photocurrent, which is interpreted as the lifetime of electrons trapped at the quasi-Fermi-level, is found to be proportional to ${F}^{\mathrm{\ensuremath{-}}0.38}$ (F is the optical-bias level) at room temperature. Enhancement in transient photocurrent response may be understood as a result of partial saturation of the trap states in the band tail by the optical-bias illumination. Because of the partial saturation of the gap states and the use of a weak probe pulse, the system studied by this technique is in a quasi-steady-state with small perturbation where experimental results can be interpreted with little ambiguity. This effect is applied to study the density of the band-tail states of the sample as well as the process of charge recombination.