Novel 3-dimensional 46F/sup 2/ SRAM technology with 0.294um/sup 2/ S/sup 3/ (stacked single-crystal Si) cell and SSTFT (stacked single-crystal thin film transistor)

J.H. Jang,S. Jung,Y.H. Kang,W.S. Cho,J.H. Moon,C. Yeo,K. Kwak,B.H. Choi,B. Hwang,W. Jung,S. Kim,J. Kim,J. Na,H. Lim,J. Jeong
DOI: https://doi.org/10.1109/ESSDER.2004.1356587
2004-11-15
Abstract:We have realized a 46F/sup 2/ SRAM cell size of 0.294 /spl mu/m/sup 2/ with 80 nm technology and single stack S/sup 3/ cell technology. SSTFTs and vertical node contacts are major keys in the S/sup 3/ cell technology. The stacked single crystal silicon thin film is developed for the load pMOS SSTFT of the S/sup 3/ SRAM cell. The load pMOS SSTFT is stacked on ILD to reduce the SRAM cell size. Fully working 64 Mbit SRAM is achieved by this S/sup 3/ cell technology. The basic reliability of SSTFT, with 80 nm length, is also investigated in this study.
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