Single bath electrodeposition of CuInSe/sub 2/ and Cu(In,Ga)Se/sub 2/ for thin film photovoltaic cells

M. E. Calixto,K. Dobson,B. McCandless,R. Birkmire
DOI: https://doi.org/10.1109/PVSC.2005.1488148
2005-08-08
Abstract:In this paper, an electrodeposition (ED) process for growth of CuInSe/sub 2/ and Cu(In,Ga)Se/sub 2/ films from single baths is presented. The use of buffered baths and careful selection of bath concentrations allows good control of the composition of the deposited films. Prior to cell processing, CuInSe/sub 2/ and Cu(In,Ga)Se/sub 2/ films require recrystallization by annealing in H/sub 2/Se/Ar. Promising results have been obtained for ED CuInSe/sub 2/- and ED Cu(In,Ga)Se/sub 2/-based devices. Optimization of the selenization treatment and a better understanding of the bath chemistry and film growth mechanism are expected to lead to significant improvements in cell performance.
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