Surface morphology during multilayer epitaxial growth of Ge(001).

Van Nostrand JE,Chey,Hasan,Cahill,Greene
DOI: https://doi.org/10.1103/PHYSREVLETT.74.1127
IF: 8.6
1995-02-13
Physical Review Letters
Abstract:The surface morphology of Ge(001) films grown by molecular beam epitaxy on a Ge(001) substrate is measured using scanning tunneling microscopy. Growth mounds are observed for single crystal films deposited at temperatures of 60--230 [degree]C and film thicknesses of 5 nm to 1 [mu]m. With increasing growth temperature, the average separation between mounds becomes increasingly well defined, increasing from less than 10 nm at 60 [degree]C to nearly 200 nm at 230 [degree]C. This regular arrangement of growth mounds is inconsistent with the self-affine growth morphology predicted by most kinetic roughening models.
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